Datasheet > 2SC5382_2015

2SC5382_2015

更新时间： 2024-11-17 01:18:51

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	153K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC5382_2015 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC5382

DESCRIPTION

·With TO-220F package

·High Voltage

·High speed switching

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

UNIT

Open emitter

Open base

1200

550

Open collector

I_CM

Collector current-peak

Base current

I_B

I_BM

Base current-peak

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-C}

Thermal resistance junction case

3.13

℃/W

12 3

中文翻译

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