Datasheet > 2SC5379R

2SC5379R

更新时间： 2024-10-01 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	53K
描述
TRANSISTOR \| BJT \| NPN \| 8V V(BR)CEO \| 80MA I(C) \| SOT-346

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中文翻译

获取价格

数据手册

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2SC5379R 数据手册

Transistor

2SC5379

Silicon NPN epitaxial planer type

For low-voltage low-noise high-frequency oscillation

Unit: mm

1.6±0.15

0.8±0.1

0.4

Features

■

●

Low noise figure NF.

●

High gain.

●

High transition frequency f_T.

●

SS-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing.

Absolute Maximum Ratings (Ta=25˚C)

■

0.2±0.1

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1:Base

2:Emitter

3:Collector

EIAJ:SC–75

SS–Mini Type Package

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

125

Marking symbol : HT

T_j

125

T_stg

–55 ~ +125

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Transition frequency

Collector output capacitance

Foward transfer gain

Noise figure

V_CB= 10V, I_E= 0

I_EBO

V_EB= 1V, I_C= 0

µA

h_FE

V_CE= 5V, I_C= 10mA

200

f_T

V_CE= 5V, I_C= 10mA, f = 2GHz

V_CB= 5V, I_E= 0, f = 1MHz

V_CE= 5V, I_C= 10mA, f = 1GHz

V_CE= 5V, I_C= 3mA, f = 1GHz

7.0

0.6

GHz

C_ob

| S_21e

1.0

8.5

11.0

1.6

^*h_FERank classification

Rank

h_FE

80 ~ 115

HTQ

95 ~ 155

HTR

135 ~ 200

HTS

Marking Symbol

12 3

中文翻译

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