生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 16 A |
配置: | SINGLE | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5382 | SHINDENGEN |
获取价格 |
Switching Power Transistor(6A NPN) | |
2SC5382 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2SC5382 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2SC5382 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2SC5382 | NJSEMI |
获取价格 |
Trans GP BJT NPN 550V 6A 3-Pin(3+Tab) FTO-220 | |
2SC5382_15 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2SC5382_2015 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2SC5383 | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, NPN, Silicon, ULTRA SUPER MINI P | |
2SC5383 | ISAHAYA |
获取价格 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type) | |
2SC5383_10 | ISAHAYA |
获取价格 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |