Datasheet > 2SC5376FV-B(TPL3)

2SC5376FV-B(TPL3)

更新时间： 2024-11-16 19:59:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	155K
描述
TRANSISTOR,BJT,NPN,12V V(BR)CEO,400MA I(C),SOT-416VAR

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中文翻译

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技术参数
数据手册

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2SC5376FV-B(TPL3) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.4 A	配置：	Single
最小直流电流增益 (hFE)：	500	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.15 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	80 MHz	Base Number Matches：	1

2SC5376FV-B(TPL3) 数据手册

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2SC5376FV

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5376FV

Audio Frequency General Purpose Amplifier Applications

Unit: mm

For Muting and Switching Applications

•

Low Collector Saturation Voltage:

= 15 mV (typ.)

CE (sat) (1)

1.2±0.05

0.8±0.05

@I = 10 mA/I = 0.5 mA

High Collector Current: I = 400 mA (max)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

1.BASE

400

°C

VESM

2.EMITTER

3.COLLECTOR

Base current

Collector power dissipation

Junction temperature

Storage temperature range

150 *

150

JEDEC

―

JEITA

stg

−55~150

TOSHIBA

2-1L1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 1.5 mg (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)

0.5mm

0.45mm

0.4mm

Marking

Type Name

Classification

F A

2007-11-01

12 3 4 5

中文翻译

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