2SC5378R

更新时间： 2024-11-15 23:20:23

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
2页	34K
描述
TRANSISTOR \| BJT \| NPN \| 8V V(BR)CEO \| 80MA I(C) \| SOT-323

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中文翻译

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数据手册

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2SC5378R 数据手册

Transistor

2SC5378

Silicon NPN epitaxial planer type

For low-voltage low-noise high-frequency oscillation

Unit: mm

2.1±0.1

Features

Low noise figure NF.

0.425

1.25±0.1

0.425

■

●

High gain.

●

High transition frequency f_T.

●

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

0.2±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1:Base

2:Emitter

3:Collector

EIAJ:SC–70

S–Mini Type Package

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

Marking symbol : HT

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

I_EBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Collector output capacitance

Transition frequency

Noise figure

V_CB= 10V, I_E= 0

V_EB= 1V, I_C= 0

_CE= 5V, I_C= 10mA

µA

h_FE

C_ob

f_T

200

V_CB= 5V, I_E= 0, f = 1MHz

0.6

GHz

V_CE= 5V, I_C= 10mA, f = 2GHz

V_CE= 5V, I_C= 3mA, f = 1GHz

V_CE= 5V, I_C= 10mA, f = 1GHz

| S_21e

1.6

Foward transfer gain

8.5

Rank classification

Rank

h_FE

80 ~ 115

95 ~ 155

135 ~ 200

中文翻译

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