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2SC5336-T1RF PDF预览

2SC5336-T1RF

更新时间: 2024-10-30 14:46:55
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
8页 47K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4

2SC5336-T1RF 数据手册

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DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5336  
NPN SILICON RF TRANSISTOR FOR  
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER  
4-PIN POWER MINIMOLD  
FEATURES  
High gain:  
S
21e 2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz  
4-pin power minimold package with improved gain from the 2SC3357  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC5336  
25 pcs (Non reel)  
1 kpcs/reel  
• Magazine case  
2SC5336-T1  
• 12 mm wide embossed taping  
• Collector face the perforation side of the tape  
Remark To order evaluation samples, consult your NEC sales representative.  
Unit sample quantity is 25 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
20  
12  
V
3.0  
V
100  
mA  
W
P
tot Note  
1.2  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
°C  
°C  
Tstg  
65 to +150  
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P10938EJ2V0DS00 (2nd edition)  
Date Published August 2001 NS CP(K)  
The mark shows major revised points.  
1996, 2001  
©
Printed in Japan  

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TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243