是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.68 | 最大集电极电流 (IC): | 0.1 A |
配置: | Single | 最小直流电流增益 (hFE): | 50 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 12 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5336(NE856M02) | ETC |
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Discrete | |
2SC5336-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5336-A | RENESAS |
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RF & Microwave device | |
2SC5336RE | ETC |
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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 | |
2SC5336-RE | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5336-RE-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5336RE-T1 | RENESAS |
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TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-243 | |
2SC5336RF | ETC |
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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 | |
2SC5336-RF | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5336-RF | RENESAS |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-4 |