生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.61 | 最大集电极电流 (IC): | 0.1 A |
配置: | Single | 最小直流电流增益 (hFE): | 50 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 1.2 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5336-RF-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5336RF-T1 | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-243 | |
2SC5336RH | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 | |
2SC5336-RH | RENESAS |
获取价格 |
暂无描述 | |
2SC5336-RH | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5336-RH-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5336RH-T1 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 | |
2SC5336-T1 | RENESAS |
获取价格 |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER | |
2SC5336-T1 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5336-T1-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |