Datasheet > 2SC5336RH-T1

2SC5336RH-T1

更新时间： 2024-01-01 12:13:42

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	49K
描述
TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| TO-243

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2SC5336RH-T1 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5336

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

4-PIN POWER MINIMOLD

FEATURES

•

High gain:

21e ²= 12 dB TYP. @ V^CE= 10 V, I^C= 20 mA, f = 1 GHz

4-pin power minimold package with improved gain from the 2SC3357

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5336

25 pcs (Non reel)

1 kpcs/reel

• Magazine case

2SC5336-T1

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.0

100

tot ^Note

1.2

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

−65 to +150

Note Mounted on 16 cm²× 0.7 mm (t) ceramic substrate (Copper plating)

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P10938EJ2V0DS00 (2nd edition)

Date Published August 2001 NS CP(K)

The mark • shows major revised points.

1996, 2001

Printed in Japan

12 3 4 5 6 7 8

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与2SC5336RH-T1相关器件

型号	品牌	获取价格	描述	数据表
2SC5336-T1	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
2SC5336-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336-T1RE	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336-T1RE	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-4
2SC5336-T1RE-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336-T1RF	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336-T1RF	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-4
2SC5336-T1RF-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336-T1RH	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic