5秒后页面跳转
2SC5336-A PDF预览

2SC5336-A

更新时间: 2024-10-30 15:25:11
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段晶体管
页数 文件大小 规格书
8页 49K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4

2SC5336-A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.23
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
基于收集器的最大容量:0.8 pF集电极-发射极最大电压:12 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PSSO-F3JESD-609代码:e6
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):6500 MHz
Base Number Matches:1

2SC5336-A 数据手册

 浏览型号2SC5336-A的Datasheet PDF文件第2页浏览型号2SC5336-A的Datasheet PDF文件第3页浏览型号2SC5336-A的Datasheet PDF文件第4页浏览型号2SC5336-A的Datasheet PDF文件第5页浏览型号2SC5336-A的Datasheet PDF文件第6页浏览型号2SC5336-A的Datasheet PDF文件第7页 
DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5336  
NPN SILICON RF TRANSISTOR FOR  
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER  
4-PIN POWER MINIMOLD  
FEATURES  
High gain:  
S
21e 2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz  
4-pin power minimold package with improved gain from the 2SC3357  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC5336  
25 pcs (Non reel)  
1 kpcs/reel  
• Magazine case  
2SC5336-T1  
• 12 mm wide embossed taping  
• Collector face the perforation side of the tape  
Remark To order evaluation samples, consult your NEC sales representative.  
Unit sample quantity is 25 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
20  
12  
V
3.0  
V
100  
mA  
W
P
tot Note  
1.2  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
°C  
°C  
Tstg  
65 to +150  
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P10938EJ2V0DS00 (2nd edition)  
Date Published August 2001 NS CP(K)  
The mark shows major revised points.  
1996, 2001  
©
Printed in Japan  

与2SC5336-A相关器件

型号 品牌 获取价格 描述 数据表
2SC5336RE ETC

获取价格

TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243
2SC5336-RE NEC

获取价格

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336-RE-A NEC

获取价格

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336RE-T1 RENESAS

获取价格

TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-243
2SC5336RF ETC

获取价格

TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243
2SC5336-RF NEC

获取价格

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336-RF RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-4
2SC5336-RF-A NEC

获取价格

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336RF-T1 RENESAS

获取价格

TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-243
2SC5336RH ETC

获取价格

TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243