是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.23 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 0.8 pF |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 6500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5336-RF-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5336RF-T1 | RENESAS |
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TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-243 | |
2SC5336RH | ETC |
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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 | |
2SC5336-RH | RENESAS |
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暂无描述 | |
2SC5336-RH | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5336-RH-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5336RH-T1 | ETC |
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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 | |
2SC5336-T1 | RENESAS |
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NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER | |
2SC5336-T1 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC5336-T1-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |