Datasheet > 2SC5178R-T2

2SC5178R-T2

更新时间： 2024-02-13 12:07:56

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器光电二极管晶体管
页数	文件大小	规格书
10页	198K
描述
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-4

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技术参数
数据手册

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2SC5178R-T2 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SC5178R-T2 数据手册

2SC5178R

COLLECTOR CURRENT vs.

COLLECTOR-TO-EMITTER VOLTAGE

DC GAIN vs.

COLLECTOR CURRENT

500

200

100

200 µA

180 µA

160 µA

140 µA

120 µA

100 µA

80 µA

60 µA

40 µA

I^B= 20 µA

VCE = 2 V

VCE = 1 V

2.2

2.4

2.6

100

Collector-to-emitter voltage VCE (V)

Collector current IC (mA)

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT

FORWARD TRANSFER GAIN vs.

COLLECTOR CURRENT

f = 2 GHz

2 V

V^CE= 1 V

Collector current IC (mA)

NOISE FIGURE vs.

COLLECTOR CURRENT

FEEDBACK CAPACITANCE vs.

COLLECTOR-TO-BASE VOLTAGE

0.5

0.4

f = 2 GHz

0.3

VCE = 1 V

V^CE= 2 V

0.2

0.1

100

1.0

2.0

3.0

4.0

5.0

Collector current IC (mA)

Collector-to-base voltage VCB (V)

1 2 3 456 7 8...10

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与2SC5178R-T2相关器件

型号	品牌	获取价格	描述	数据表
2SC5178T1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 3V V(BR)CEO \| 10MA I(C) \| SOT-143R
2SC5178-T1	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF
2SC5178-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD,
2SC5178-T2	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF
2SC5178-T2FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC,
2SC5179	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF
2SC5179-FB	NEC	获取价格	暂无描述
2SC5179T1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 3V V(BR)CEO \| 30MA I(C) \| SC-70
2SC5179-T1	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF
2SC5179-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD,