Datasheet > 2SC3930

2SC3930

更新时间： 2024-09-19 07:30:47

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管光电二极管 ISM频段放大器
页数	文件大小	规格书
3页	838K
描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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2SC3930 数据手册

2SC3930

TRANSISTOR (NPN)

SOT-323

FEATURES

For high-frequency Amplification Complementary to 2SA1532

Optimum for RF amplification of FM/AM radios

High transition frequency f_T

1.BASE

2.EMITTER

3.COLLECTOR

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

℃

P_C

150

-55-150

T_J

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=100μA, I_E=0

I_C= 100μA, I_B=0

I_E= 100μA, I_C=0

V_CB=10V,I_E=0

0.1

220

μA

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=10V,I_C=1mA

V_CE=10V,I_E=1mA,

f=200MHZ

Transition frequency

f_T

150

MHz

Common emitter reverse transfer

capacitance

V_CB=10V,I_C=1mA,

f=10.7MHZ

Cre

1.5

Noise figure

Z_rb

V_CB=10V,I_C=1mA, f=5MHz

V_CB=10V,I_C=1mA, f=2MHz

Reverse transfer impedance

Ω

CLASSIFICATION OF h^FE

(1)

Marking

Range

70-140

110-220

JinYu

semiconductor

www.htsemi.com

12 3

中文翻译

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2SC3930G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
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