Transistor
2SC3930
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1532
Unit: mm
2.1±0.1
0.425
1.25±0.1
0.425
Features
■
●
Optimum for RF amplification of FM/AM radios.
●
1
High transition frequency fT.
●
S-Mini type package, allowing downsizing of the equipment and
3
automatic insertion through the tape packing and the magazine
packing.
2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
0.2±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
20
V
5
30
V
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
mA
mW
˚C
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
Marking symbol : V
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
0.1
Unit
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
VCB = 10V, IE = 0
µA
*
hFE
fT
VCB = 10V, IE = –1mA
70
220
VCB = 10V, IE = –1mA, f = 200MHz
VCB = 10V, IE = –1mA, f = 5MHz
VCB = 10V, IE = –1mA, f = 2MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
150
250
2.8
22
MHz
dB
Ω
NF
Zrb
4
Reverse transfer impedance
50
1.5
Common emitter reverse transfer capacitance Cre
0.9
pF
*hFE Rank classification
Rank
hFE
B
C
70 ~ 140
VB
110 ~ 220
VC
Marking Symbol
1