2SC3264O

更新时间： 2024-01-28 01:33:45

品牌	Logo	应用领域
急速微 - ALLEGRO		晶体晶体管
页数	文件大小	规格书
1页	33K
描述
Power Bipolar Transistor, 17A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT200, 3 PIN

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技术参数
数据手册

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2SC3264O 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.82

2SC3264O 数据手册

LAP T 2 S C3 2 6 4

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295)

Application : Audio and General Purpose

External Dimensions MT-200

(Ta=25°C)

■Electrical Characteristics

■Absolute maximum ratings

(Ta=25°C)

Ratings

Symbol

I^CBO

Ratings

100max

230min

50min

Conditions

Symbol

V^CBO

VCEO

VEBO

Unit

µA

Unit

±0.2

6.0

±0.3

36.4

230

V^CB=230V

±0.2

24.4

2.1

±0.1

2-ø3.2

IEBO

230

V^EB=5V

V(BR)CEO

hFE

I^C=25mA

V^CE=4V, IC=5A

I^C=5A, IB=0.5A

V^CE=12V, IE=–2A

V^CB=10V, f=1MHz

VCE(sat)

2.0max

60typ

MHz

200(Tc=25°C)

150

°C

COB

250typ

+0.2

-0.1

0.65

+0.2

1.05

-0.1

Tstg

–55 to +150

h^FERank O(50 to 100), Y(70 to 140)

+0.3

-0.1

3.0

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

Weight : Approx 18.4g

a. Part No.

V^CC

(V)

(Ω)

(A)

VBB1

(V)

V^BB2

(V)

I^B1

(A)

I^B2

(A)

tstg

(µs)

ton

(µs)

b. Lot No.

–5

0.5

–0.5

2.40typ 0.50typ

0.30typ

–

I^CV^CECharacteristics (Typical)

VCE(sat) IB Characteristics (Typical)

I^CV^BETemperature Characteristics (Typical)

(VCE=4V)

IC=10A

50mA

I^B=20mA

0.5

1.0

1.5

2.0

Collector-Emitter Voltage V^CE(V)

Base Current I^B(A)

Base-Emittor Voltage V^BE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=4V)

200

100

200

125˚C

100

25˚C

Typ

–30˚C

0.5

0.02

0.1

100

Time t(ms)

1000 2000

0.1

0.5

10 17

0.02

0.1

0.5

10 17

Collector Current IC(A)

Collector Current I^C(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

100

200

160

120

Typ

0.5

Without Heatsink

Natural Cooling

Without Heatsink

0.1

100

300

–0.02

–0.1

–1

–10

100

125

150

Collector-Emitter Voltage V^CE(V)

Emitter Current I^E(A)

Ambient Temperature Ta(˚C)

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