2SC3265-O

更新时间： 2024-12-01 07:30:39

品牌	Logo	应用领域
美微科 - MCC		晶体放大器晶体管开关光电二极管
页数	文件大小	规格书
3页	319K
描述
NPN General Purpose Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC3265-O 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

2SC3265-O

2SC3265-Y

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

NPN General

Purpose Amplifier

Power switching application

Complementary to 2SA1298

Low frequency power amplifier application

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Maximum Ratings

SOT-23

Symbol

Rating

Unit

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

0.8

Collector Current, Continuous

P_D

T_J

T_STG

Power Dissipation

Operating Junction Temperature

Storage Temperature

0.2

-55 to +150

^OC

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Type

Max

Units

V_(BR)CEO

Collector-Emitter Breakdown Voltage*

(I_C=10mAdc, I_B=0)

Vdc

V_(BR)CBO

V_(BR)EBO

Collector-Base Breakdown Voltage

(I_C=0.1mAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=0.1mAdc, I_C=0)

Collector cut-off Current

(V_CB=30Vdc, I_E=0

Emitter cut-off Current

(V_EB=5Vdc, I_C=0

Vdc

DIMENSIONS

5.0

INCHES

MIN

DIM

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

0.1

uAdc

c^BO

I_EBO

h_FE

0.1

DC Current Gain

(I_C=100mAdc, V_CE=1.0Vdc)

.0005

.035

.003

.015

100

320

.085

.37

V_CE(sat)

Collector-Emitter Saturation Voltage

(I_C=500mAdc, I_B=20mAdc)

0.5

Vdc

Suggested Solder

Pad Layout

V_BE

f_T

Base-Emitter Voltage

(I_C=10mAdc, V_CE=1Vdc)

0.5

0.8

Vdc

.031

.800

Transition Frequency

(I_C=10mAdc, V_CE=5Vdc,f=100MHz)

.035

.900

120

MHz

Collector output capacitance

(I_E=0, V_CB=10Vdc,f=1MHz)

.079

2.000

inches

CLASSIFICATION OF hFE(1)

.037

.950

100-200

ank

.037

.950

160-320

ange

MARKING

www.mccsemi.com

1 of 3

Revision: A

2011/01/01

12 3

中文翻译

下载PDF

与2SC3265-O相关器件

型号	品牌	获取价格	描述	数据表
2SC3265-O(TE85L,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
2SC3265OTE85L	TOSHIBA	获取价格	TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SC3265-O-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
2SC3265TE85L	TOSHIBA	获取价格	TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SC3265TE85R	TOSHIBA	获取价格	TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SC3265Y	TOSHIBA	获取价格	Low Frequency Power Amplifier Applications Power Switching Applications
2SC3265-Y	MCC	获取价格	NPN General Purpose Amplifier
2SC3265-Y	TOSHIBA	获取价格	TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59,
2SC3265-Y(T5L,PP,F	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
2SC3265-Y(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO

与2SC3265-O相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC3265-O

2SC3265-O 数据手册

与2SC3265-O相关器件

与2SC3265-O相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC3265-O

2SC3265-O 数据手册

与2SC3265-O相关器件

与2SC3265-O相关文章

您还可以找

您在本页遇到什么问题？