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2SC3265OTE85L PDF预览

2SC3265OTE85L

更新时间： 2024-01-11 20:23:15
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
4页 173K
描述
TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

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2SC3265OTE85L 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.69
最大集电极电流 (IC)：0.8 A集电极-发射极最大电压：25 V
配置：SINGLE最小直流电流增益 (hFE)：40
JEDEC-95代码：TO-236JESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：120 MHz
VCEsat-Max：0.4 VBase Number Matches：1

2SC3265OTE85L 数据手册

 浏览型号2SC3265OTE85L的Datasheet PDF文件第2页浏览型号2SC3265OTE85L的Datasheet PDF文件第3页浏览型号2SC3265OTE85L的Datasheet PDF文件第4页 
2SC3265  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC3265  
Low Frequency Power Amplifier Applications  
Power Switching Applications  
Unit: mm  
•
•
High DC current gain:  
h
= 100~320  
FE (1)  
Low saturation voltage: V  
= 0.4 V (max)  
CE (sat)  
(I = 500 mA, I = 20 mA)  
C
B
•
Complementary to 2SA1298  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
30  
25  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
800  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
160  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
T
j
150  
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TO-236MOD  
SC-59  
TOSHIBA  
2-3F1A  
Weight: 0.012 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 30 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
⎯
⎯
25  
5
⎯
⎯
⎯
⎯
0.1  
0.1  
⎯
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= 5 V, I = 0  
C
EBO  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
V
V
I
I
= 10 mA, I = 0  
B
(BR) CEO  
(BR) EBO  
C
E
= 0.1 mA, I = 0  
⎯
V
C
h
FE (1)  
(Note)  
FE (2)  
V
V
= 1 V, I = 100 mA  
100  
⎯
320  
CE  
C
DC current gain  
h
= 1 V, I = 800 mA  
40  
⎯
⎯
⎯
⎯
0.4  
0.8  
⎯
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= 500 mA, I = 20 mA  
V
V
CE (sat)  
C
B
V
V
V
V
= 1 V, I = 10 mA  
0.5  
⎯
⎯
BE  
CE  
CE  
CB  
C
Transition frequency  
f
= 5 V, I = 10 mA  
120  
13  
MHz  
pF  
T
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
⎯
⎯
ob  
E
Note: h  
classification O: 100~200, Y: 160~320  
FE (1)  
1
2007-11-01  
1234

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