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2SC3266-BL PDF预览

2SC3266-BL

更新时间: 2024-11-06 19:56:55
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
3页 368K
描述
TRANSISTOR 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal

2SC3266-BL 技术参数

生命周期:End Of Life零件包装代码:TO-92
包装说明:2-5F1B, SC-43, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.49
最大集电极电流 (IC):2 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):350
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
最大功率耗散 (Abs):0.75 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

2SC3266-BL 数据手册

 浏览型号2SC3266-BL的Datasheet PDF文件第2页浏览型号2SC3266-BL的Datasheet PDF文件第3页 
2SC3266  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC3266  
Power Amplifier Applications  
Power Switching Applications  
Unit: mm  
Low saturation voltage: V  
= 0.5 V (max) (I = 2 A)  
CE (sat) C  
Complementary to 2SA1296  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
20  
20  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
6
V
I
2
A
C
Base current  
I
0.5  
A
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
750  
150  
55~150  
mW  
°C  
°C  
C
T
j
T
stg  
JEDEC  
JEITA  
TO-92  
SC-43  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-5F1B  
Weight: 0.21 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 20 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
20  
6
0.1  
0.1  
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= 6 V, I = 0  
C
EBO  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
V
V
I
I
= 10 mA, I = 0  
B
(BR) CEO  
(BR) EBO  
C
E
= 0.1 mA, I = 0  
V
C
h
FE (1)  
(Note)  
V
V
= 2 V, I = 0.1 A  
120  
700  
CE  
C
DC current gain  
h
= 2 V, I = 2 A  
75  
0.5  
0.85  
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= 2 A, I = 0.1 A  
V
V
CE (sat)  
C
B
V
V
V
V
= 2 V, I = 0.1 A  
BE  
CE  
CE  
CB  
C
Transition frequency  
f
= 2 V, I = 0.5 A  
120  
30  
MHz  
pF  
T
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
ob  
E
Note: h  
classification Y: 120~240, GR: 200~400, BL: 350~700  
FE (1)  
1
2007-11-01  

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