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2SC3267_03 PDF预览

2SC3267_03

更新时间: 2024-09-16 12:50:03
品牌 Logo 应用领域
东芝 - TOSHIBA 开关放大器电源开关功率放大器
页数 文件大小 规格书
3页 126K
描述
Power Amplifier Applications Power Switching Applications

2SC3267_03 数据手册

 浏览型号2SC3267_03的Datasheet PDF文件第2页浏览型号2SC3267_03的Datasheet PDF文件第3页 
                                                        
                                                        
                                                                     
                                                                     
2SC3267  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC3267  
Power Amplifier Applications  
Power Switching Applications  
Unit: mm  
·
·
Low saturation voltage: V = 0.5 V (max) @I = 2 A  
CE (sat) C  
Complementary to 2SA1297  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
20  
20  
V
V
CBO  
CEO  
EBO  
6
V
I
2
A
C
Base current  
I
0.5  
A
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
400  
150  
-55~150  
mW  
°C  
°C  
C
T
j
T
stg  
JEDEC  
JEITA  
TOSHIBA  
2-4E1A  
Weight: 0.13 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
= 20 V, I = 0  
¾
¾
20  
6
¾
¾
¾
¾
0.1  
0.1  
¾
mA  
mA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= 6 V, I = 0  
C
EBO  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
V
V
I
I
= 10 mA, I = 0  
B
(BR) CEO  
(BR) EBO  
C
E
= 0.1 mA, I = 0  
¾
V
C
h
FE (1)  
V
= 2 V, I = 100 mA  
120  
¾
700  
CE  
C
DC current gain  
(Note)  
h
V
= 2 V, I = 2 A  
75  
¾
¾
¾
¾
¾
¾
¾
0.5  
0.85  
¾
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= 2 A, I = 0.1 A  
V
V
CE (sat)  
C
B
V
V
V
V
= 2 V, I = 0.1 A  
¾
BE  
CE  
CE  
CB  
C
Transition frequency  
f
= 2 V, I = 0.5 A  
120  
30  
MHz  
pF  
T
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
¾
ob  
E
Note: h  
classification Y: 120~240, GR: 200~400, BL: 350~700  
FE (1)  
1
2003-03-25  

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