Datasheet > 2SC3265

2SC3265

更新时间： 2024-12-02 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
3页	614K
描述
三极管

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中文翻译

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数据手册

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2SC3265 数据手册

UMW

UMW 2SC3265

SOT-23 Plastic-Encapsulate Transistors

SOT-23

2SC3265

TRANSISTOR (NPN)

FEATURES

1. BASE

2. EMITTER

3. COLLECTOR

High DC current gain

Complementary to KTA1298

MAXIMUM RATINGS (T^a=25 unless otherwise noted)

℃

Symbol

V_CBO

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

800

200

150

-55-150

℃

P_C

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 100μA, I_E=0

I_C= 10mA, I_B=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=100μA, I_C=0

V_CB=30 V, I_E=0

0.1

320

0.5

0.8

μA

Collector cut-off current

I_EBO

V_EB=5 V, I_C=0

DC current gain

h_FE

V_CE=1V, I_C= 100mA

I_C=500mA, I_B=20mA

V_CE=1V,I_C=10mA

100

0.5

Collector-emitter saturation voltage

base-emitter voltage

V_CE(sat)

V_BE

V_CE=5V, I_C=10mA

f=100MHz

Transition frequency

120

MHz

f_T

Collector output capacitance

V_CB=10V,I_E=0,f=1MH_Z

C_ob

CLASSIFICATION OF h_FE

Rank

100-200

160-320

Range

Marking

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