Datasheet > 2SC3265

2SC3265

更新时间： 2024-02-14 11:21:46

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
1页	57K
描述
High DC current gain: hFE (1) = 100320. Low saturation voltage: VCE (sat) = 0.4 V (max)

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技术参数
数据手册

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2SC3265 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.69
Is Samacsys：	N	湿度敏感等级：	1
峰值回流温度（摄氏度）：	260	处于峰值回流温度下的最长时间：	10
Base Number Matches：	1

2SC3265 数据手册

SMD Type

Transistors

Product specification

2SC3265

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High DC current gain: h^FE(1) = 100320.

Low saturation voltage: VCE (sat) = 0.4 V (max)

(I^C= 500 mA, I^B= 20 mA).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

800

Base current

I^B

160

Collector power dissipation

Junction temperature

Storage temperature range

P^C

200

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

0.1

Unit

ìA

Collector cut-off current

Emitter cut-off current

V^CB= 30 V, I^E= 0

V^EB= 50 V, IC = 0

I^EBO

0.1

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

DC current gain

V^{(BR) CEO}I^C= 10 mA, I^B= 0

V^{(BR) EBO}I^E= 0.1 mA, I^C= 0

h^FE

V^CE= 1 V, I^C= 100 mA

100

320

0.4

0.8

Collector-emitter saturation voltage

Base-emitter voltage

V^{CE (sat)}I^C= 500 mA, I^B= 20 mA

V^BE

f^T

V^CE= 1 V, I^C= 10 mA

0.5

Transition frequency

V^CE= 5 V, I^C= 10 mA

120

MHz

Collector output capacitance

C^ob

V^CB= 10 V, I^E= 0, f = 1 MHz

hFE Classification

Marking

hFE

100 200

160 320

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