LAP T 2 S C3 2 6 4
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295)
Application : Audio and General Purpose
External Dimensions MT-200
(Ta=25°C)
■Electrical Characteristics
■Absolute maximum ratings
(Ta=25°C)
Ratings
Symbol
ICBO
Ratings
100max
100max
230min
50min
Conditions
Symbol
VCBO
VCEO
VEBO
IC
Unit
µA
µA
V
Unit
±0.2
6.0
±0.3
36.4
230
VCB=230V
V
±0.2
24.4
2.1
±0.1
2-ø3.2
IEBO
230
VEB=5V
9
V
V(BR)CEO
hFE
5
IC=25mA
V
VCE=4V, IC=5A
IC=5A, IB=0.5A
VCE=12V, IE=–2A
VCB=10V, f=1MHz
17
5
A
a
b
VCE(sat)
fT
2.0max
60typ
IB
V
MHz
pF
A
PC
200(Tc=25°C)
150
W
°C
°C
2
COB
250typ
Tj
3
+0.2
-0.1
0.65
+0.2
1.05
-0.1
Tstg
–55 to +150
hFE Rank O(50 to 100), Y(70 to 140)
+0.3
-0.1
3.0
±0.1
±0.1
5.45
5.45
■Typical Switching Characteristics (Common Emitter)
B
C
E
Weight : Approx 18.4g
a. Part No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
tstg
(µs)
tf
(µs)
ton
(µs)
b. Lot No.
60
12
5
10
–5
0.5
–0.5
2.40typ 0.50typ
0.30typ
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
17
15
3
17
15
10
5
2
10
1
IC=10A
5
0
50mA
IB=20mA
5A
0
0
0
1
2
3
4
0
0.5
1.0
1.5
2.0
0
1
2
3
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=4V)
(VCE=4V)
3
200
100
50
200
125˚C
100
25˚C
Typ
1
–30˚C
50
0.5
10
10
0.02
0.1
1
10
100
Time t(ms)
1000 2000
0.1
0.5
1
5
10 17
0.02
0.1
0.5
1
5
10 17
Collector Current IC(A)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
40
100
80
200
160
120
80
10
5
Typ
60
40
1
0.5
Without Heatsink
Natural Cooling
20
0
40
Without Heatsink
5
0
0.1
3
10
100
300
–0.02
–0.1
–1
–10
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Emitter Current IE(A)
Ambient Temperature Ta(˚C)
65