Datasheet > 2SC3265

2SC3265

更新时间： 2024-12-01 06:22:07

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描述
Silicon NPN Epitaxial

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中文翻译

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数据手册

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2SC3265 数据手册

SMD Type

TransistIoCrs

Silicon NPN Epitaxial

2SC3265

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High DC current gain: hFE (1) = 100320.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

Low saturation voltage: VCE (sat) = 0.4 V (max)

(I^C= 500 mA, IB = 20 mA).

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

800

Base current

I^B

160

Collector power dissipation

Junction temperature

Storage temperature range

P^C

200

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

0.1

Unit

ìA

Collector cut-off current

Emitter cut-off current

VCB = 30 V, IE = 0

VEB = 50 V, IC = 0

I^EBO

0.1

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

DC current gain

V^{(BR) CEO}IC = 10 mA, IB = 0

V^{(BR) EBO}IE = 0.1 mA, IC = 0

h^FE

VCE = 1 V, IC = 100 mA

100

320

0.4

0.8

Collector-emitter saturation voltage

Base-emitter voltage

VCE (sat) IC = 500 mA, IB = 20 mA

V^BE

f^T

VCE = 1 V, IC = 10 mA

0.5

Transition frequency

VCE = 5 V, IC = 10 mA

120

MHz

Collector output capacitance

C^ob

VCB = 10 V, IE = 0, f = 1 MHz

hFE Classification

Marking

hFE

100 200

160 320

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