Datasheet > 2SC3264

2SC3264

更新时间： 2024-12-01 06:17:27

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
4页	167K
描述
Silicon NPN Power Transistors

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中文翻译

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2SC3264 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3264

DESCRIPTION

·With MT-200 package

·Complement to type 2SA1295

APPLICATIONS

·Audio and general purpose applications

PINNING(see Fig.2)

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (MT-200) and symbol

Emitter

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

VALUE

230

UNIT

Collector-base voltage

Open emitter

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

I_B

Base current

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

200

150

-55~150

ꢀ

T_j

T_stg

ꢀ

12 3 4

中文翻译

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与2SC3264相关器件

型号	品牌	获取价格	描述	数据表
2SC3264_07	SANKEN	获取价格	Silicon NPN Epitaxial Planar Transistor
2SC3264O	ALLEGRO	获取价格	Power Bipolar Transistor, 17A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC3264Y	ALLEGRO	获取价格	Power Bipolar Transistor, 17A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC3265	WINNERJOIN	获取价格	NPN EPITAXIAL SILICON TRANSISTOR
2SC3265	TYSEMI	获取价格	High DC current gain: hFE (1) = 100320. Low saturation voltage: VCE (sat) = 0.4 V (max)
2SC3265	KEXIN	获取价格	Silicon NPN Epitaxial
2SC3265	TOSHIBA	获取价格	NPN EPITAXIAL TYPE (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING APPLICATIONS)
2SC3265	UMW	获取价格	三极管
2SC3265_03	TOSHIBA	获取价格	Low Frequency Power Amplifier Applications Power Switching Applications
2SC3265LT1	WINNERJOIN	获取价格	NPN EPITAXIAL SILICON TRANSISTOR