Datasheet > 2SC2873

2SC2873

更新时间： 2024-11-06 07:30:39

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
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描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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2SC2873 数据手册

2SC2873

SOT- 89-3L

TRANSISTOR (NPN)

FEATURES

1. BASE



Small Flat Package

2. COLLECTOR

3. EMITTER

High Speed Switching Time

Low Collector-emitter saturation voltage

Complementary to 2SA1213

APPLICATIONS



Power Amplifier and Switching

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

250

150

-55~+150

℃/W

℃

P_C

R_θJA

T_j

Storage Temperature

T_stg

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=100µA,I_E=0

I_C=1mA,I_B=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=100µA,I_C=0

V_CB=50V,I_E=0

0.1

240

µA

I_EBO

V_EB=5V,I_C=0

Emitter cut-off current

h_FE(1)

V_CE=2V, I_C=0.5A

V_CE=2V, I_C=2A

I_C=1A,I_B=50mA

VCE=2V,IC=0.5A

V_CB=10V, I_E=0, f=1MHz

DC current gain

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

0.5

1.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

120

MHz

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1)

RANK

RANGE

70–140

120–240

MARKING

JinYu

semiconductor

www.htsemi.com

中文翻译

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与2SC2873相关器件

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2SC2873_04	TOSHIBA	获取价格	Power Amplifier Applications Power Switching Applications
2SC2873-G	COMCHIP	获取价格	General Purpose Transistor
2SC2873O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 2A I(C) \| SC-62
2SC2873-O	MCC	获取价格	NPN Silicon Epitaxial Transistors
2SC2873-O(TE12L)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),SOT-89
2SC2873O-G	COMCHIP	获取价格	General Purpose Transistor
2SC2873TA	ZETEX	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
2SC2873TA	DIODES	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC2873Y	TOSHIBA	获取价格	Power Amplifier Applications
2SC2873-Y	MCC	获取价格	NPN Silicon Epitaxial Transistors