Datasheet > 2SC2873_04

2SC2873_04

更新时间： 2024-11-25 07:30:39

品牌	Logo	应用领域
东芝 - TOSHIBA		开关放大器电源开关功率放大器
页数	文件大小	规格书
5页	159K
描述
Power Amplifier Applications Power Switching Applications

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2SC2873_04 数据手册

2SC2873

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC2873

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low saturation voltage: V

CE (sat)

= 0.5 V (max) (I = 1 A)

High-speed switching time: t

Small flat package

= 1.0 µs (typ.)

stg

= 1.0 to 2.0 W (mounted on a ceramic substrate)

Complementary to 2SA1213

Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

0.4

500

JEDEC

JEITA

―

Collector power dissipation

SC-62

2-5K1A

1000

(Note 1)

TOSHIBA

Junction temperature

150

°C

Weight: 0.05 g (typ.)

Storage temperature range

stg

−55 to 150

Note 1: Mounted on a ceramic substrate (250 mm²× 0.8 t)

2004-07-07

12 3 4 5

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与2SC2873_04相关器件

型号	品牌	获取价格	描述	数据表
2SC2873-G	COMCHIP	获取价格	General Purpose Transistor
2SC2873O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 2A I(C) \| SC-62
2SC2873-O	MCC	获取价格	NPN Silicon Epitaxial Transistors
2SC2873-O(TE12L)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),SOT-89
2SC2873O-G	COMCHIP	获取价格	General Purpose Transistor
2SC2873TA	ZETEX	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
2SC2873TA	DIODES	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC2873Y	TOSHIBA	获取价格	Power Amplifier Applications
2SC2873-Y	MCC	获取价格	NPN Silicon Epitaxial Transistors
2SC2873-Y	YANGJIE	获取价格	SOT-89