Datasheet > 2SC2873-G

2SC2873-G

更新时间： 2024-11-26 00:29:43

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
4页	175K
描述
General Purpose Transistor

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数据手册

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2SC2873-G 数据手册

General Purpose Transistor

2SC2873-G Series (NPN)

RoHS Device

Features

- Small flat package

- High speed switching time.

- Low collector-emitter saturation voltage.

SOT-89-3L

Circuit Diagram

0.181(4.60)

0.173(4.40)

Collector

1 : BASE

0.061(1.55)

REF.

2 : COLLECTOR

3 : EMITTER

Base

0.102(2.60)

0.091(2.30)

0.167(4.25)

0.155(3.94)

Emitter

0.020(0.52)

0.023(0.58)

0.016(0.40)

Maximum Ratings (at TA=25°C unless otherwise noted)

0.013(0.32)

Symbol

Parameter

Value

Unit

0.060(1.50)

TYP.

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

VCBO

VCEO

VEBO

0.118(3.00)

TYP.

0.063(1.60)

0.055(1.40)

Collector current

Collector power dissipation

500

0.017(0.44)

0.014(0.35)

Thermal resistance from

junction to ambient

0.047(1.20)

0.035(0.90)

RθJA

250

°C/W

Junction temperature

Storage temperature

150

°C

Dimensions in inches and (millimeter)

Tstg

-55~+150

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Conditions

Min

Max

Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

IC =100μA , IE=0

V(BR)CBO

V(BR)CEO

V(BR)EBO

IC =1mA , IB=0

IE =100μA , IC=0

VCB=50V , IE=0

µA

ICBO

IEBO

0.1

VEB=5V , IC=0

Emitter cut-off current

VCE=2V , IC=0.5mA

VCE=2V , IC=2mA

IC=1A , IB=50mA

VCE=2V , IC=0.5A

VCB=10V, IE=0 , F=1MHZ

hFE(1)

240

DC current gain

hFE(2)

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

Transition frequency

VCE(sat)

VBE(sat)

0.5

1.2

120

MHZ

Collector output capacitance

Cob

Classification Of hFE

2SC2873O-G

70-140

Part No.

2SC2873Y-G

Range

120-240

Marking

REV: A

Page 1

Company reserves the right to improve product design , functions and reliability without notice.

QW-BTR43

12 3 4

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