2SC2873-O

更新时间： 2024-11-25 07:30:39

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管开关
页数	文件大小	规格书
4页	290K
描述
NPN Silicon Epitaxial Transistors

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中文翻译

获取价格

数据手册

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2SC2873-O 数据手册

M C C

2SC2873-O

2SC2873-Y

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

xꢀ Low saturation voltage

NPN Silicon

Epitaxial Transistors

xꢀ High speed switching time

xꢀ Complementary to 2SA1213

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

ꢀ

^·Maximum Ratings

SOT-89

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Rating

Unit

5.0

2.0

P_C

Collector power dissipation

Junction Temperature

0.5

150

T_J

T_STG

Storage Temperature

-55 to +150

Electrical Characteristics @ 25к Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V _(BR)CBO

V_(BR)EBO

Collector-Emitter Breakdown Voltage

(I_C=1mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=0.1mAdc, I_B=0)

Emitter-Base Breakdown Voltage

(I_E=0.1mAdc, I_C=0)

---

Vdc

5.0

I_CBO

I_EBO

Collector-Base Cutoff Current

(V_CB=50Vdc,I_E=0)

---

0.1

uAdc

Emitter-Base Cutoff Current

(V_EB=5.0Vdc, I_C=0)

ꢀ

1. Base

ON CHARACTERISTIC

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

DC Current Gain

(I_C=0.5Adc, V_CE=2.0Vdc)

DC Current Gain *

(I_C=2.0Adc, V_CE=2.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=1.0Adc, I_B=0.05Adc)

Base-Emitter Saturation Voltage

(I_C=1.0Adc,I_B=0.05Adc)

---

240

---

2. Collector

3. Emitter

---

0.5

1.2

---

Vdc

MHz

---

ꢁꢂꢃꢄꢅꢆꢂꢅꢆꢀ

ꢀ

ꢁꢂꢃꢀ

ꢂꢅꢇꢈꢄꢆꢀ

ꢃꢃꢀ

ꢅꢋꢌꢄꢆꢀ

Transition Frequency

120

ꢃꢂꢅꢀ

ꢃꢉꢊꢀ

ꢃꢂꢅꢀ

ꢒꢍꢐꢓꢀ

ꢎꢍꢔꢕꢀ

ꢐꢍꢓꢎꢀ

ꢕꢍꢑꢕꢀ

ꢘꢍꢐꢒꢀ

ꢐꢍꢕꢕꢀ

ꢕꢍꢐꢐꢀ

ꢕꢍꢐꢑꢀ

ꢎꢍꢒꢕꢀ

ꢃꢉꢊꢀ

ꢒꢍꢔꢕꢀ

ꢎꢍꢑꢕꢀ

ꢒꢍꢎꢓꢀ

ꢎꢍꢕꢕꢀ

ꢘꢍꢗꢒꢀ

ꢚꢚꢚꢚꢚꢀ

(V_CE=2.0Vdc, I_C=0.5Adc)

Collector output capacitance

(V_CB=10Vdc,IE=0, f=1.0MHz)

ꢉꢀ

ꢖꢀ

ꢇꢀ

ꢁꢀ

ꢄꢀ

ꢙꢀ

ꢝꢀ

ꢈꢀ

ꢞꢀ

ꢍꢎꢏꢐꢀ

ꢍꢕꢔꢐꢀ

ꢍꢎꢗꢒꢀ

ꢍꢕꢐꢎꢀ

ꢍꢕꢓꢘꢀ

ꢍꢎꢎꢑꢀ

ꢍꢕꢎꢐꢀ

ꢍꢕꢎꢗꢀ

ꢍꢕꢗꢗꢀ

ꢍꢎꢑꢎꢀ

ꢍꢕꢏꢎꢀ

ꢍꢎꢔꢗꢀ

ꢍꢕꢐꢓꢀ

ꢍꢎꢕꢕꢀ

ꢚꢚꢚꢚꢚꢀ

ꢀ

C_ob

---

ꢀ

CLASSIFICATION OF H^{FE (1)}

ꢌꢛꢜꢀ

Rank

Range

Marking

ꢍꢕꢎꢓꢀ

ꢍꢕꢘꢎꢀ

ꢍꢕꢎꢔꢀ

ꢍꢕꢔꢐꢀ

ꢕꢍꢒꢑꢀ

ꢕꢍꢗꢐꢀ

ꢕꢍꢒꢎꢀ

ꢎꢍꢔꢕꢀ

ꢀ

70-140

120-240

ꢀ

www.mccsemi.com

1 of 4

Revision: A

2011/01/01

12 3 4

中文翻译

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与2SC2873-O相关器件

型号	品牌	获取价格	描述	数据表
2SC2873-O(TE12L)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),SOT-89
2SC2873O-G	COMCHIP	获取价格	General Purpose Transistor
2SC2873TA	ZETEX	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
2SC2873TA	DIODES	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC2873Y	TOSHIBA	获取价格	Power Amplifier Applications
2SC2873-Y	MCC	获取价格	NPN Silicon Epitaxial Transistors
2SC2873-Y	YANGJIE	获取价格	SOT-89
2SC2873-Y(T2LDI,CF	TOSHIBA	获取价格	Small Signal Bipolar Transistor
2SC2873-Y(TE12L,CF	TOSHIBA	获取价格	Trans GP BJT NPN 50V 2A 4-Pin(3+Tab) PW-Mini T/R
2SC2873-Y(TE12L,F)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),SOT-89

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