Datasheet > 2SB970S

2SB970S

更新时间： 2024-11-17 23:20:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	64K
描述
TRANSISTOR \| BJT \| PNP \| 10V V(BR)CEO \| 500MA I(C) \| TO-236AB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB970S 数据手册

Transistor

2SB0970 (2SB970)

Silicon PNP epitaxial planer type

For low-voltage output amplification

Unit: mm

2.8 ⁺^–0⁰^.^.³²

1.5 ⁺^–0⁰^.^.⁰²⁵⁵

0.65 0.15

Features

0.65 0.15

Low collector to emitter saturation voltage V_CE(sat)

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–15

Unit

0.1 to 0.3

0.4 0.2

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–10

–7

–1

1:Base

2:Emitter

JEDEC:TO–236

EIAJ:SC–59

I_C

– 0.5

200

3:Collector

Mini Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

Marking symbol : 1R

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CB= –10V, I_E= 0

–100

V_CBO

V_CEO

V_EBO

I_C= –10µA, I_E= 0

I_C= –1mA, I_B= 0

I_E= –10µA, I_C= 0

–15

–10

–7

h_FE1

h_FE2

_CE= –2V, I_C= –0.5A^*2

130

350

Forward current transfer ratio

V_CE= –2V, I_C= –1A^*2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= –0.4A, I_B= –8mA

– 0.16

– 0.8

130

– 0.3

–1.2

I_C= –0.4A, I_B= –8mA

Transition frequency

f_T

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

130 ~ 220

1RR

180 ~ 350

1RS

Marking Symbol

Note.) The Part number in the Parenthesis shows conventional

part number.

12 3

中文翻译

下载PDF

与2SB970S相关器件

型号	品牌	获取价格	描述	数据表
2SB970-S-HF	KEXIN	获取价格	PNP Transistors
2SB970TMG	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon
2SB974	ISC	获取价格	Silicon PNP Darlington Power Transistor
2SB974	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB975	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB975	ISC	获取价格	Silicon PNP Darlington Power Transistor
2SB976	PANASONIC	获取价格	For Low-Frequency Output Amplification
2SB976Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 18V V(BR)CEO \| 5A I(C) \| TO-92
2SB976R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 18V V(BR)CEO \| 5A I(C) \| TO-92
2SB977	PANASONIC	获取价格	2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC15