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2SB980 PDF预览

2SB980

更新时间: 2024-11-18 05:57:19
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 227K
描述
Silicon PNP Power Transistor

2SB980 数据手册

 浏览型号2SB980的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
2SB980  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= -120V(Min)  
·Good Linearity of hFE  
·Wide Area of Safe Operation  
APPLICATIONS  
·Designed for high power amplifications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-120  
-120  
-5  
UNIT  
V
V
V
A
A
Collector Current-Continuous  
Collector Current-Pulse  
-6  
ICP  
-10  
Collector Power Dissipation  
@ TC=25℃  
70  
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
3
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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