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2SB985 PDF预览

2SB985

更新时间: 2024-11-18 12:54:35
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 132K
描述
TRANSISTOR (PNP)

2SB985 数据手册

  
RoHS  
2SB985  
TO-92MOD  
2SB985 TRANSISTOR (PNP)  
1. EMITTER  
FEATURES  
Power dissipation  
2. COLLECTOR  
3. BASE  
PCM:  
1
W (Tamb=25)  
Collector current  
ICM:  
-3  
A
V
Collector-base voltage  
123  
V(BR)CBO  
:
-60  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-10µA, IE=0  
Ic=-1mA, IB=0  
MIN  
-60  
-50  
-6  
TYP  
MAX  
UNIT  
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
IE=-10µA, IC=0  
µA  
µA  
VCB=-40V, IE=0  
-1  
-1  
IEBO  
Emitter cut-off current  
VEB=-4V, IC=0  
hFE(1)  
V
CE=-2V, IC=-100mA  
100  
40  
560  
DC current gain  
hFE(2)  
VCE=-2V, IC=-3A  
VCE(sat)  
VBE(sat)  
fT  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
IC=-2A, IB=-100mA  
IC=-2A, IB=-100mA  
VCE=-10V, IC=-50mA  
CB=-10V, IE=0, f=1MHz  
-0.7  
-1.2  
100  
MHz  
pF  
Cob  
50  
Collector output capacitance  
V
CLASSIFICATION OF hFE(1)  
R
S
T
U
Rank  
WEJ ELECTRONIC CO.,LTD  
100-200  
140-280  
200-400  
280-560  
Range  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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