Datasheet > 2SB985-R

2SB985-R

更新时间： 2024-01-22 06:13:11

品牌	Logo	应用领域
安森美 - ONSEMI		开关晶体管
页数	文件大小	规格书
4页	35K
描述
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MP, 3 PIN

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2SB985-R 技术参数

生命周期：	Transferred	包装说明：	CYLINDRICAL, O-PBCY-T3
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.31	最大集电极电流 (IC)：	3 A
集电极-发射极最大电压：	50 V	配置：	SINGLE
最小直流电流增益 (hFE)：	100	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	150 MHz
VCEsat-Max：	0.7 V	Base Number Matches：	1

2SB985-R 数据手册

Ordering number:ENN1244C

PNP/NPN Epitaxial Planar Silicon Transistors

2SB985/2SD1347

Large-Current Driving Applications

Applcations

Package Dimensions

unit:mm

· Power supplies, relay drivers, lamp drivers, electrical

equipment.

2006B

[2SB985/2SD1347]

Features

6.0

5.0

4.7

· Adoption of FBET, MBIT processes.

· Low saturation voltage.

· Large current capacity and wide ASO.

0.5

0.6

0.5

1 : Emitter

2 : Collector

3 : Base

( ) : 2SB985

SANYO : MP

1.45

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

(–)60

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

(–)50

CEO

(–)6

EBO

(–)3

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

(–)6

150

˚C

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=(–)40V, I =0

(–)1.0

560*

µA

CBO

Emitter Cutoff Current

DC Current Gain

=(–)4V, I =0

EBO

=(–)2V, I =(–)100mA

100*

=(–)2V, I =(–)3A

Gain-Bandwidth Product

=(–)10V, I =(–)50mA

150

25(39)

MHz

Common Base Output Capacitance

=(–)10V, f=1MHz

* : The 2SB985/2SD1347 are classified by 100mA h as follows :

Continued on next page.

Rank

100 to 200 140 to 280 200 to 400 280 to 560

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O0303TN (KT)/92098HA (KT)/4077KI/D064MW/1253KI, TS No.1244–1/4

12 3 4

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2SB985S	ONSEMI	3000mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN	获取价格
2SB985T	ONSEMI	3000mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN	获取价格
2SB985U	ETC	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 3A I(C) \| TO-92VAR	获取价格
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2SB986R	ETC	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 4A I(C) \| TO-126	获取价格
2SB986S	ETC	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 4A I(C) \| TO-126	获取价格

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