5秒后页面跳转
2SB987Q PDF预览

2SB987Q

更新时间: 2024-11-01 21:17:39
品牌 Logo 应用领域
松下 - PANASONIC 放大器晶体管
页数 文件大小 规格书
3页 167K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-51, TO-92L, 3 PIN

2SB987Q 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.84
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):90
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

2SB987Q 数据手册

 浏览型号2SB987Q的Datasheet PDF文件第2页浏览型号2SB987Q的Datasheet PDF文件第3页 
Transistor  
2SB987  
Silicon PNP epitaxial planer type  
For low-frequency output amplification  
Complementary to 2SD1211  
Unit: mm  
5.9±0.2  
4.9±0.2  
Features  
Extremely satisfactory linearity of the forward current trasfer  
ratio hFE  
.
High transition frequency fT.  
Makes up a complementary pair with 2SD1211, wich is opti-  
mum for the pre-driver stage of a 40 to 60W outut amlifier.  
.54±0.15  
Absolute Maximum Ratings (Ta=25C)  
Parameter  
Syml  
EO  
VEBO  
ICP  
Ratings  
–120  
–120  
5  
Uit  
V
0.45+–0.21  
0.45+00..12  
Collector to base voltage  
Collector to emitter volta
Emitter to base voltage  
Peak collector curent  
Collector curent  
1.27  
1.27  
V
1:Emitter  
2:Collector  
3:Base  
1
2
3
EIAJ:SC–51  
TO–92L Package  
1  
A
IC  
– 0.5  
A
Collectoower dssipaton  
Junion terature  
Storage ature  
PC  
W
˚C  
˚C  
Tj  
50  
Tstg  
–55 ~ +150  
Electrical Characteriscs (Ta=25˚)  
eter  
Symbol  
VCEO  
VEBO  
Conditions  
min  
–120  
–5  
typ  
max  
Unit  
Covoltage  
Emitter age  
IC = –0.1mA, B = 0  
V
V
IE = –10µA, IC = 0  
*1  
hFE1  
hFE2  
VCE = –10V, IC = –150mA*2  
VCE = –5V, IC = –500mA*2  
IC = –300mA, IB = –30mA2  
IC = –300mA, IB = –30mA*2  
VCB = –10V, IE = 50mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
90  
220  
Forward current transfer ra
50  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
–1.0  
–1.2  
V
V
Transition frequency  
fT  
250  
MHz  
pF  
Collector output capacitance  
Cob  
30  
*2 Pulse measurement  
*1  
h
Rank classification  
FE1  
Rank  
hFE1  
Q
R
90 ~ 155  
130 ~ 220  
1

与2SB987Q相关器件

型号 品牌 获取价格 描述 数据表
2SB988 SAVANTIC

获取价格

Silicon PNP Power Transistors
2SB988 KEC

获取价格

2SC3229
2SB988 ISC

获取价格

Silicon PNP Power Transistors
2SB988 JMNIC

获取价格

Silicon PNP Power Transistors
2SB988_15 JMNIC

获取价格

Silicon PNP Power Transistors
2SB988_2014 JMNIC

获取价格

Silicon PNP Power Transistors
2SB988O ISC

获取价格

暂无描述
2SB988Y ISC

获取价格

Transistor
2SB992 SAVANTIC

获取价格

Silicon PNP Power Transistors
2SB992 ISC

获取价格

isc Silicon PNP Power Transistor