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2SB985R

更新时间： 2024-11-18 20:15:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 35K
描述
3000mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN

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2SB985R 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：CYLINDRICAL, O-PBCY-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.29.00.75风险等级：5.31
Is Samacsys：N最大集电极电流 (IC)：3 A
集电极-发射极最大电压：50 V配置：SINGLE
最小直流电流增益 (hFE)：100JESD-30 代码：O-PBCY-T3
JESD-609代码：e2元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
极性/信道类型：PNP认证状态：Not Qualified
表面贴装：NO端子面层：Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
端子形式：THROUGH-HOLE端子位置：BOTTOM
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：150 MHzBase Number Matches：1

2SB985R 数据手册

 浏览型号2SB985R的Datasheet PDF文件第2页浏览型号2SB985R的Datasheet PDF文件第3页浏览型号2SB985R的Datasheet PDF文件第4页 
Ordering number:ENN1244C  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SB985/2SD1347  
Large-Current Driving Applications  
Applcations  
Package Dimensions  
unit:mm  
· Power supplies, relay drivers, lamp drivers, electrical  
equipment.  
2006B  
[2SB985/2SD1347]  
Features  
6.0  
5.0  
4.7  
· Adoption of FBET, MBIT processes.  
· Low saturation voltage.  
· Large current capacity and wide ASO.  
0.5  
0.6  
0.5  
0.5  
1 : Emitter  
2 : Collector  
3 : Base  
2
3
1
( ) : 2SB985  
SANYO : MP  
1.45  
1.45  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Collector-to-Base Voltage  
V
(–)60  
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
(–)50  
CEO  
V
(–)6  
V
EBO  
I
(–)3  
A
C
Collector Current (Pulse)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
I
(–)6  
A
CP  
P
C
1
150  
W
˚C  
˚C  
Tj  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
I
V
V
V
V
V
V
=(–)40V, I =0  
(–)1.0  
(–)1.0  
560*  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CE  
CB  
E
Emitter Cutoff Current  
DC Current Gain  
I
=(–)4V, I =0  
EBO  
C
h
1
=(–)2V, I =(–)100mA  
100*  
40  
FE  
C
h
2
=(–)2V, I =(–)3A  
FE  
C
Gain-Bandwidth Product  
f
=(–)10V, I =(–)50mA  
150  
25(39)  
MHz  
pF  
T
C
Common Base Output Capacitance  
C
=(–)10V, f=1MHz  
ob  
* : The 2SB985/2SD1347 are classified by 100mA h as follows :  
Continued on next page.  
FE  
Rank  
R
S
T
U
h
100 to 200 140 to 280 200 to 400 280 to 560  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
O0303TN (KT)/92098HA (KT)/4077KI/D064MW/1253KI, TS No.1244–1/4  
1234

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2SB985S ONSEMI

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 		3000mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN
2SB985T ONSEMI

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 		3000mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN
2SB985U ETC

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 		50V/4A Switching Applications
2SB986R ETC

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 		TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-126
2SB986S ETC

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 		TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-126
2SB986T ETC

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 		TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-126
2SB986U ETC

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 		TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-126
2SB987 ETC

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 		TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 500MA I(C) | TO-92VAR

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