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2SB985 PDF预览

2SB985

更新时间: 2024-11-19 14:55:03
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
4页 955K
描述
功率三极管

2SB985 数据手册

 浏览型号2SB985的Datasheet PDF文件第2页浏览型号2SB985的Datasheet PDF文件第3页浏览型号2SB985的Datasheet PDF文件第4页 
2SB985  
PNP Silicon Epitaxial Planar Power Transistor  
Features  
• The transistor is subdivided into three groups  
A, B and C according to its DC current gain  
Applications  
1. Emitter 2. Collector 3. Base  
• For use in driver and output stages of audio  
frequency amplifiers  
TO-92 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Symbol  
-VCBO  
-VCEO  
-VEBO  
-IC  
Value  
Unit  
60  
V
V
50  
6
V
Collector Current  
3
A
Collector Current (Pulse)  
Power Dissipation  
-ICP  
6
A
Ptot  
1
W
O
Junction Temperature  
Storage Temperature Range  
Tj  
150  
C
O
Tstg  
- 55 to + 150  
C
Thermal Resistance Ratings  
Parameter  
Symbol  
RθJA  
Max.  
125  
Unit  
/W  
Thermal Resistance Junction to Ambient  
®
1 / 4  
Dated04/08/2022 CL Rev:02  

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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-126
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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-126
2SB986U ETC

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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-126