Datasheet > 2SB970-S-HF

2SB970-S-HF

更新时间： 2024-09-25 01:12:55

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页数	文件大小	规格书
2页	933K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB970-S-HF 数据手册

SMD Type

Transistors

PNP Transistors

2SB970-HF

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● Low collector to emitter saturation voltage VCE(sat)

● For low-voltage output amplification

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

+0.1

+0.05

-0.01

0.95

-0.1

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-15

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

-10

-7

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-500

-1

200

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I

Min

-15

-10

-7

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

CB= - 10V , I

^EB= -6V , I

-0.1

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-400 mA, I

=-8mA

-0.16 -0.3

C=-400 mA, I

-0.8

-1.2

350

^CE= -2V, I

CE= -2V, I

= -500mA

= -1A

130

DC current gain

hFE

Collector output capacitance

Transition frequency

CB= -10V, I

CE= -10V, I

= 0,f=1MHz

= 50mA，f=200MHz

130

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SB970-R-HF

130-220

2SB970-S-HF

180-350

1RR

1RS

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