Datasheet > 2SB979

2SB979

更新时间： 2024-11-18 06:17:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	226K
描述
Silicon PNP Power Transistor

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2SB979 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB979

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -100V(Min)

·Good Linearity of h_FE

·Wide Area of Safe Operation

APPLICATIONS

·Designed for high power amplifications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-100

-5

UNIT

Collector Current-Continuous

Collector Current-Pulse

-5

I_CP

-8

Collector Power Dissipation

@ T_C=25℃

P_C

Collector Power Dissipation

@ T_a=25℃

T_J

Junction Temperature

150

-55~150

℃

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

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与2SB979相关器件

型号	品牌	获取价格	描述	数据表
2SB980	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB980	ISC	获取价格	Silicon PNP Power Transistor
2SB984	NEC	获取价格	PNP SILICON TRANSISTOR
2SB984K	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| TO-221VAR
2SB984-K	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon,
2SB984L	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| TO-221VAR
2SB984-L	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon,
2SB985	SANYO	获取价格	Large-Current Driving Applications
2SB985	TRSYS	获取价格	Plastic-Encapsulated Transistors
2SB985	WEITRON	获取价格	PNP General Purpose Transistors