2SB788

更新时间： 2024-02-29 16:26:11

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	39K
描述
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

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2SB788 数据手册

Transistor

2SB788

Silicon PNP epitaxial planer type

For high breakdown voltage low-noise amplification

Complementary to 2SD958

Unit: mm

6.9±0.1

2.5±0.1

1.5

1.5 R0.9

1.0

Features

High collector to emitter voltage V_CEO

■

R0.9

●

Low noise voltage NV.

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.7

0.85

Absolute Maximum Ratings (Ta=25˚C)

■

0.55±0.1

0.45±0.05

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–120

–7

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

2.5

–50

˚C

I_C

–20

1:Base

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

400

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

–1

Unit

µA

V_CB= –50V, I_E= 0

V_CE= –50V, I_B= 0

_C= –10µA, I_E= 0

Collector cutoff current

I_CEO

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

–120

–7

I_C= –1mA, I_B= 0

I_E= –10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= –5V, I_C= –2mA

180

700

Collector to emitter saturation voltage V_CE(sat)

I_C= –20mA, I_B= –2mA

V_CB= –5V, I_E= 2mA, f = 200MHz

V_CE= 40V, I_C= –1mA, G_V= 80dB,

R_g= 100kΩ, Function = FLAT

– 0.6

Transition frequency

f_T

150

MHz

Noise voltage

150

^*h_FERank classification

Rank

h_FE

180 ~ 360

260 ~ 520

360 ~ 700

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