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2SB788 PDF预览

2SB788

更新时间: 2024-11-24 22:49:27
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松下 - PANASONIC /
页数 文件大小 规格书
2页 39K
描述
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

2SB788 数据手册

 浏览型号2SB788的Datasheet PDF文件第2页 
Transistor  
2SB788  
Silicon PNP epitaxial planer type  
For high breakdown voltage low-noise amplification  
Complementary to 2SD958  
Unit: mm  
6.9±0.1  
2.5±0.1  
1.5  
1.5 R0.9  
1.0  
Features  
High collector to emitter voltage VCEO  
R0.9  
.
Low noise voltage NV.  
M type package allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board.  
R0.7  
0.85  
Absolute Maximum Ratings (Ta=25˚C)  
0.55±0.1  
0.45±0.05  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–120  
–120  
–7  
Unit  
V
3
2
1
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
V
V
2.5  
2.5  
–50  
mA  
mA  
mW  
˚C  
IC  
–20  
1:Base  
2:Collector  
3:Emitter  
EIAJ:SC–71  
M Type Mold Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
–100  
–1  
Unit  
nA  
µA  
V
VCB = –50V, IE = 0  
VCE = –50V, IB = 0  
C = –10µA, IE = 0  
Collector cutoff current  
ICEO  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
I
–120  
–120  
–7  
IC = –1mA, IB = 0  
V
IE = –10µA, IC = 0  
V
*
Forward current transfer ratio  
hFE  
VCE = –5V, IC = –2mA  
180  
700  
Collector to emitter saturation voltage VCE(sat)  
IC = –20mA, IB = –2mA  
VCB = –5V, IE = 2mA, f = 200MHz  
VCE = 40V, IC = –1mA, GV = 80dB,  
Rg = 100k, Function = FLAT  
– 0.6  
V
Transition frequency  
fT  
150  
MHz  
Noise voltage  
NV  
150  
mV  
*hFE Rank classification  
Rank  
hFE  
R
S
T
180 ~ 360  
260 ~ 520  
360 ~ 700  
1

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