Datasheet > 2SB789Q

2SB789Q

更新时间： 2024-09-23 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	66K
描述
TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 500MA I(C) \| SC-62

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中文翻译

获取价格

数据手册

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2SB789Q 数据手册

Transistor

2SB0789, 2SB0789A (2SB789, 2SB789A)

Silicon PNP epitaxial planer type

For low-frequency driver amplification

Unit: mm

Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A)

1.5 0.1

4.5 0.1

1.6 0.2

Features

High collector to emitter voltage V_CEO

Large collector power dissipation P_C.

45°

Absolute Maximum Ratings (Ta=25˚C)

0.4 0.08

0.4 0.04

Parameter

Symbol

Ratings

–100

–120

–100

–120

–5

Unit

0.5 0.08

1.5 0.1

Collector to

2SB0789

2SB0789A

2SB0789

3.0 0.15

V_CBO

base voltage

Collector to

V_CEO

emitter voltage 2SB0789A

Emitter to base voltage

Peak collector current

Collector current

marking

V_EBO

I_CP

–1

1:Base

2:Collector

3:Emitter

I_C

–0.5

EIAJ:SC–62

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

Mini Power Type Package

T_j

150

(2SB0789)

Marking symbol : D

T_stg

–55 ~ +150

(2SB0789A)

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

Parameter

Collector to emitter 2SB0789

voltage 2SB0789A

Symbol

Conditions

I_C= –100µA, I_B= 0

min

–100

–120

–5

typ

max

Unit

V_CEO

Collector to base voltage

V_EBO

I_E= –10µA, I_C= 0

_CE= –10V, I_C= –150mA

h_FE1

220

Forward current transfer ratio

h_FE2

V_CE= –5V, I_C= –500mA

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= –500mA, I_B= –50mA

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

– 0.2

– 0.6

–1.2

– 0.85

120

Transition frequency

f_T

MHz

Collector output capacitance

Cob

^*h_FE1Rank classification

Rank

h_FE1

90 ~ 155

130 ~ 220

2SB0789

Marking

Symbol

2SB0789A

Note.) The Part numbers in the Parenthesis show conventional

part number.

12 3

中文翻译

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