2SB790

更新时间： 2024-11-24 22:27:15

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	40K
描述
Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)

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中文翻译

获取价格

数据手册

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2SB790 数据手册

Transistor

2SB790

Silicon PNP epitaxial planer type

For low-frequency output amplification

Complementary to 2SD969

Unit: mm

6.9±0.1

2.5±0.1

1.5

1.5 R0.9

1.0

Features

■

R0.9

●

Low collector to emitter saturation voltage V_CE(sat)

●

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.7

0.85

Absolute Maximum Ratings (Ta=25˚C)

■

0.55±0.1

0.45±0.05

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–25

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–20

–7

2.5

–1

I_C

– 0.5

600

1:Base

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

–1

Unit

µA

V_CB= –25V, I_E= 0

Collector cutoff current

I_CEO

V_CE= –20V, I_B= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= –10µA, I_E= 0

–25

–20

–7

I_C= –1mA, I_B= 0

I_C= –10µA, I_C= 0

V_CE= –2V, I_C= –0.5A^*2

V_CE= –2V, I_C= –1A^*2

I_C= –500mA, I_B= –50mA^*2

220

h_FE1

h_FE2

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

– 0.4

–1.2

Transition frequency

f_T

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

150

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

90 ~ 155

130 ~ 220

中文翻译

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