Transistor
2SB0792, 2SB0792A (2SB792, 2SB792A)
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Unit: mm
Complementary to 2SD0814 (2SD814)
2.8 +–00..32
0.65 0.15
1.5 +–00..0255
0.65 0.15
Features
High collector to emitter voltage VCEO
Low noise voltage NV.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
G
.
G
1
2
G
3
Absolute Maximum Ratings (Ta=25˚C)
I
Parameter
Symbol
Ratings
–150
–185
–150
–185
–5
Unit
Collector to
2SB0792
2SB0792A
2SB0792
0.1 to 0.3
0.4 0.2
VCBO
V
base voltage
Collector to
VCEO
V
emitter voltage 2SB0792A
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
V
mA
mA
mW
˚C
1:Base
2:Emitter
JEDEC:TO–236
EIAJ:SC–59
–100
–50
3:Collector
Mini Type Package
(2SB0792)
Marking symbol : I
Collector power dissipation
Junction temperature
Storage temperature
PC
200
(2SB0792A)
2F
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector cutoff current
VCB = –100V, IE = 0
–1
µA
Collector to emitter 2SB0792
–150
–185
–5
VCEO
VEBO
IC = –100µA, IB = 0
IE = –10µA, IC = 0
V
V
voltage
2SB0792A
Emitter to base voltage
Forward current
transfer ratio
2SB0792
130
130
450
330
–1
*
hFE
VCE = –5V, IC = –10mA
2SB0792A
Collector to emitter saturation voltage VCE(sat)
IC = –30µA, IB = –3mA
V
MHz
pF
Transition frequency
fT
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
VCE = –10V, IC = –1mA, GV = 80dB,
Rg = 100kΩ, Function = FLAT
200
4
Collector output capacitance
Cob
Noise voltage
NV
150
mV
*hFE Rank classification
Rank
hFE
R
S
T
130 ~ 220
IR
185 ~ 330
IS
260 ~ 450
2SB0792
IT
—
Marking
Symbol
Note.) The Part numbers in the Parenthesis show
conventional part number.
2SB0792A
2FR
2FS
1