Datasheet > 2SB792

2SB792

更新时间： 2024-11-25 12:32:43

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	60K
描述
High collector-emitter voltage VCEO Low noise voltage NV

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2SB792 数据手册

Product specification

2SB792,2SB792A

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High collector-emitter voltage V^CEO

Low noise voltage NV

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^CBO

Rating

-150

Unit

Collector-base voltage

Collector-emitter voltage

2SB792

2SB792A

2SB792

2SB792A

-185

-150

V^CEO

-185

Emitter-base voltage

Collector current

V^EBO

I^C

-5

-50

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

P^C

T^j

-100

200

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CEO

Testconditons

Min

Typ

Max

Unit

Collector-emitter voltage

2SB792

-150

-185

-5

I^C= -100 ìA, I^B= 0

2SB792A

Emitter-base voltage

V^EBO

I^CBO

I^E= -10 ìA, I^C= 0

Collector-base cutoff current

Forward current transfer ratio

V^CB= -100 V, I^E= 0

-1

450

330

-1

ìA

2SB792

130

h^FE

V^CE= -5 V, I^C= -10 mA

2SB792A

Collector-emitter saturation voltage

Transition frequency

V^CE(sat)I^C= -30 mA, I^B= -3 mA

f^T

V^CE= -10 V, I^C= -10 mA, f = 200 MHz

V^CB= -10 V, I^E= 0, f = 1 MHz

200

MHz

Collector output capacitance

C^ob

V^CE= -10 V, I^C= -1 mA, G^V= 80 dB

Rg = 100KÙ, Function = FLAT

Noise voltage

150

hFE Classification

2SB792

Marking

2SB792A

2FR

2FS

Rank

h^FE

130 220

185 330

260 450

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