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2SB792 PDF预览

2SB792

更新时间: 2024-11-24 22:27:15
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
2页 40K
描述
Silicon PNP epitaxial planer type

2SB792 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.8Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):130JEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SB792 数据手册

 浏览型号2SB792的Datasheet PDF文件第2页 
Transistor  
2SB792, 2SB792A  
Silicon PNP epitaxial planer type  
For high breakdown voltage low-noise amplification  
Complementary to 2SD814  
Unit: mm  
2.8 +00..32  
0.65±0.15  
1.5 +00..0255  
0.65±0.15  
Features  
High collector to emitter voltage VCEO  
.
Low noise voltage NV.  
1
2
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
3
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
Ratings  
–150  
–185  
–150  
–185  
–5  
Unit  
Collector to  
2SB792  
2SB792A  
2SB792  
0.1 to 0.3  
VCBO  
V
0.4±0.2  
base voltage  
Collector to  
VCEO  
V
emitter voltage 2SB792A  
Emitter to base voltage  
Peak collector current  
Collector current  
VEBO  
ICP  
IC  
V
mA  
mA  
mW  
˚C  
1:Base  
2:Emitter  
JEDEC:TO–236  
EIAJ:SC–59  
–100  
–50  
3:Collector  
Mini Type Package  
(2SB792)  
Marking symbol : I  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
200  
(2SB792A)  
2F  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff current  
VCB = –100V, IE = 0  
–1  
µA  
Collector to emitter 2SB792  
–150  
–185  
–5  
VCEO  
VEBO  
IC = –100µA, IB = 0  
IE = –10µA, IC = 0  
V
V
voltage  
2SB792A  
Emitter to base voltage  
Forward current  
transfer ratio  
2SB792  
130  
130  
450  
330  
–1  
*
hFE  
VCE = –5V, IC = –10mA  
2SB792A  
Collector to emitter saturation voltage VCE(sat)  
IC = –30µA, IB = –3mA  
V
MHz  
pF  
Transition frequency  
fT  
VCB = –10V, IE = 10mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
VCE = –10V, IC = –1mA, GV = 80dB,  
Rg = 100k, Function = FLAT  
200  
4
Collector output capacitance  
Cob  
Noise voltage  
NV  
150  
mV  
*hFE Rank classification  
Rank  
hFE  
R
S
T
130 ~ 220  
IR  
185 ~ 330  
IS  
260 ~ 450  
2SB792  
IT  
Marking  
Symbol  
2SB792A  
2FR  
2FS  
1

2SB792 替代型号

型号 品牌 替代类型 描述 数据表
2SB0792 PANASONIC

功能相似

For High Breakdown Voltage Low-noise Amplification

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TRANSISTOR | BJT | PNP | 185V V(BR)CEO | 50MA I(C) | TO-236AB