Datasheet > 2SB788T

2SB788T

更新时间： 2024-09-23 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	64K
描述
TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 20MA I(C) \| SC-71

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中文翻译

获取价格

数据手册

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2SB788T 数据手册

Transistor

2SB0788 (2SB788)

Silicon PNP epitaxial planer type

For high breakdown voltage low-noise amplification

Complementary to 2SD0958 (2SD958)

Unit: mm

6.9 0.1

2.5 0.1

1.0

1.5

1.5 R0.9

Features

High collector to emitter voltage V_CEO

Low noise voltage NV.

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.9

R0.7

0.85

Absolute Maximum Ratings (Ta=25˚C)

0.55 0.1

0.45 0.05

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–120

–7

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

2.5

–50

˚C

I_C

–20

1:Base

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

400

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

–1

Unit

µA

V_CB= –50V, I_E= 0

V_CE= –50V, I_B= 0

_C= –10µA, I_E= 0

Collector cutoff current

I_CEO

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

–120

–7

I_C= –1mA, I_B= 0

I_E= –10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= –5V, I_C= –2mA

180

700

Collector to emitter saturation voltage V_CE(sat)

I_C= –20mA, I_B= –2mA

V_CB= –5V, I_E= 2mA, f = 200MHz

V_CE= 40V, I_C= –1mA, G_V= 80dB,

R_g= 100kΩ, Function = FLAT

– 0.6

Transition frequency

f_T

150

MHz

Noise voltage

150

^*h_FERank classification

Rank

h_FE

180 ~ 360

260 ~ 520

360 ~ 700

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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2SB789H	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon
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2SB789TX	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon