2SB647

更新时间： 2024-09-21 03:56:31

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
3页	169K
描述
Plastic-Encapsulated Transistors

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中文翻译

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数据手册

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2SB647 数据手册

UTC 2SB647

PNP EPITAXIAL SILICON TRANSISTOR

SILICON PNP EPITAXIAL

APPLICATION

* Low frequency power amplifier

TO-92NL

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

-120

-80

-5

-1

-2

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Peak Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Ic(peak)

0.9

150

°C

Tstg

-55 ~ +150

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Ic= -10µA,IE =0

MIN TYP MAX UNIT

-120

-80

-5

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage V(BR)CEO

V(BR)CBO

Ic= -1mA,R^BE=∞

I^E= -10µA,IC=0

VCB= -100V,IE=0

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

V(BR)EBO

ICBO

µA

-10

DC Current Transfer Ratio

hFE1

hFE2

VCE(sat)

VBE

Cob

VCE= -5V, Ic= -150mA(note)

VCE= -5V, Ic= -500mA(note)

Ic= -500mA,IB= -50 mA(note)

VCE= -5V,Ic= -150mA(note)

VCE= -5V,Ic= -150mA

320

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Gain Bandwidth Product

-1

-1.5

MHz

140

Collector Output Capacitance

VCB= -10V,IE=0,f=1MHz

Note: Pulse test

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R211-010,A

12 3

中文翻译

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