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2SB647AB PDF预览

2SB647AB

更新时间: 2024-11-19 20:17:31
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
3页 91K
描述
Transistor

2SB647AB 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
最大集电极电流 (IC):1 A配置:Single
最小直流电流增益 (hFE):60最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.9 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):140 MHzBase Number Matches:1

2SB647AB 数据手册

 浏览型号2SB647AB的Datasheet PDF文件第2页浏览型号2SB647AB的Datasheet PDF文件第3页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92MOD Plastic-Encapsulate Transistors  
TO-92MOD  
2SB647/2SB647A TRANSISTOR (PNP)  
FEATURE  
1. EMITTER  
Power dissipation  
2. COLLECTOR  
3. BASE  
PCM  
:
0.9 W (Tamb=25)  
Collector current  
ICM:  
-1  
A
Collector-base voltage  
V(BR)CBO  
:
120 V  
123  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
MAX  
UNIT  
Collector-base breakdown voltage  
V(BR)CBO  
-120  
V
Ic= -10µA , IE=0  
Collector-emitter breakdown voltage 2SB647  
-80  
-100  
V(BR)CEO  
IC=-1mA , IB=0  
V
2SB647A  
Emitter-base breakdown voltage  
V(BR)EBO  
ICBO  
-5  
V
IE= -10µA, IC=0  
Collector cut-off current  
VCB= -100 V, IE=0  
-10  
µA  
2SB647  
2SB647A  
60  
60  
320  
200  
hFE(1)*  
VCE=-5 V, IC= -150mA  
DC current gain  
hFE(2)  
VCE=-5 V, IC= -500mA  
IC=-500mA, IB=-50mA  
30  
Collector-emitter saturation voltage  
Transition frequency  
VCEsat  
-1  
V
V
CE=-5V, IC= -150mA  
140  
MHz  
pF  
fT  
VCE=-10V, IE=0  
f=1 MHz  
Output capacitance  
20  
Cob  
CLASSIFICATION OF hFE  
B
C
D
Rank  
2SB647  
60-120  
60-120  
100-200  
100-200  
160-320  
-
Range  
2SB647A  

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