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2SB647A PDF预览

2SB647A

更新时间: 2024-11-20 14:55:03
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
5页 583K
描述
TO-92M

2SB647A 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-92MOD Plastic-Encapsulate Transistors  
TO – 92MOD  
2SB647/2SB647A TRANSISTOR (PNP)  
1. EMITTER  
FEATURES  
2. COLLECTOR  
3. BASE  
z
z
Low Frequency Power Amplifier  
Complementary Pair with 2SD667/A  
ꢀꢁꢂꢃꢄꢅꢆ  
Equivalent Circuit  
B647,!ꢀ-ꢁꢂꢀꢃꢂꢄ.ꢀꢃ  
B647  
Soliddot= Green moldingcompound device,  
if none, the normal device  
ꢇꢇꢇ  
///,ꢅꢄ.ꢀ  
B647A,!ꢀ-ꢁꢂꢀꢃꢂꢄ.ꢀꢃ  
Soliddot= Green moldingcompound device,  
if none, the normal device  
B647  
A
ꢇꢇꢇ  
///,ꢅꢄ.ꢀꢀ  
ORDERING INFORMATION  
Part Number  
Package  
Packing Method  
Pack Quantity  
500pcs/Bag  
2000pcs/Box  
500pcs/Bag  
2000pcs/Box  
2SB647  
TO-92MOD  
TO-92MOD  
TO-92MOD  
TO-92MOD  
Bulk  
Tape  
Bulk  
Tape  
2SB647-TA  
2SB647A  
2SB647A-TA  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
Parameter  
Collector-Base Voltage  
Value  
-120  
-80  
Unit  
V
VCEO  
Collector-Emitter Voltage  
2SB647  
V
2SB647A  
-100  
-5  
VEBO  
IC  
Emitter-Base Voltage  
V
A
Collector Current  
-1  
900  
PC  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
mW  
/W  
RθJA  
TJ,Tstg  
139  
Operation Junction and Storage Temperature Range  
-55~+150  
www.jscj-elec.com  
1
Rev. - 2.0  

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TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-92VAR