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2SB647A-B-BP-HF PDF预览

2SB647A-B-BP-HF

更新时间: 2024-11-19 14:32:03
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
4页 733K
描述
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-92MOD, 3 PIN

2SB647A-B-BP-HF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.63
最大集电极电流 (IC):1 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):60
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):140 MHzBase Number Matches:1

2SB647A-B-BP-HF 数据手册

 浏览型号2SB647A-B-BP-HF的Datasheet PDF文件第2页浏览型号2SB647A-B-BP-HF的Datasheet PDF文件第3页浏览型号2SB647A-B-BP-HF的Datasheet PDF文件第4页 
2SB647(A)-B  
2SB647(A)-C  
2SB647-D  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
PNP Silicon  
Plastic-Encapsulate  
Transistor  
·
Capable of 0.9Watts of Power Dissipation.  
Collector-current -1.0A  
Collector-base Voltage 120V  
Operating and storage junction temperature range: -55OC to +150OC  
Halogen free available upon request by adding suffix "-HF"  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
·
·
TO-92MOD  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
K
A
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
L
J
Collector-Emitter Breakdown Voltage  
(I = -1mAdc, IB=0)  
C
- 80  
Vdc  
2SB647  
V(BR)CEO  
M
- 100  
-120  
Vdc  
Vdc  
2SB647A  
B
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
H
(I = -10uAdc, IE=0)  
G
C
Emitter-Base Voltage  
(I = -10uAdc,I =0)  
-5  
Vdc  
E
C
C
Collector Cutoff Current  
-10  
uAdc  
(VCB= -100Vdc, IE=0)  
F
ON CHARACTERISTICS  
2SB647  
hFE  
DC Current Gain  
(I = -150mAdc, VCE=-5Vdc)  
C
60  
60  
320  
200  
2SB647A  
E
E
E
C
VCE(sat)  
Collector-Emitter Saturation Voltage  
(I = -500mAdc, I = -50mAdc)  
C
B
B
-1  
Vdc  
D
C
B
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
DIMENSIONS  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
INCHES  
MIN  
.228  
.331  
.016  
MM  
MIN  
(I = -150mAdc, VCE= -5Vdc )  
140  
MHz  
pF  
C
DIM  
A
B
MAX  
MAX  
NOTE  
6.20  
8.80  
0.60  
Straight Lead  
.
244  
5.80  
8.40  
0.40  
2.90  
C
ob  
Output capacitance  
(IE= 0, VCE= -10Vdc, f=1 MHz)  
.
.
.
346  
024  
122  
20  
C
.114  
3.10  
D
Bent Lead  
.173  
.220  
4.40  
5.60  
Straight Lead  
Bent Lead  
.059  
1.50  
2.80  
E
.086  
.110  
2.20  
13.80  
0.90  
4.00  
4.70  
-----  
F
.543  
.
559  
14.20  
1.10  
G
H
J
K
L
.035  
.157  
.185  
----  
.016  
.068  
.
043  
-----  
---  
5.10  
1.60  
0.50  
2.03  
FE (1)  
CLASSIFICATION OF H  
.
.
.
.
201  
063  
020  
080  
Rank  
B
C
D
0.40  
1.73  
2SB647  
60-120  
100-200  
160-320  
M
Range  
2SB647A  
60-120  
100-200  
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
www.mccsemi.com  
1 of 4  
Revision: B  
2013/07/22  

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