Datasheet > 2SB647B(TO-92MOD)

2SB647B(TO-92MOD)

更新时间： 2024-01-19 03:32:04

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江苏长电/长晶 - CJ		/
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描述
Transistor

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技术参数
数据手册

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2SB647B(TO-92MOD) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SB647B(TO-92MOD) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92MOD Plastic-Encapsulate Transistors

TO – 92M

TO – 92MOD

2SB647/2SB647A TRANSISTOR (PNP)

1. COLLECTOR

1. EMITTER

2. BASE

FEATURES

2. COLLECTOR

3. EMITTER

3. BASE

Low Frequency Power Amplifier

Complementary Pair with 2SD667/A

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Collector-Base Voltage

Value

-120

-80

Unit

V_CEO

Collector-Emitter Voltage

2SB647

2SB647A

-100

-5

V_EBO

I_C

Emitter-Base Voltage

Collector Current

-1

900

P_C

Collector Power Dissipation

℃/W

℃

R_θJA

T_j

Thermal Resistance From Junction To Ambient

Junction Temperature

139

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

-120

-80

Typ Max

Unit

Collector-base breakdown voltage

V_(BR)CBO

I_C= -10µA,I_E=0

2SB647

Collector-emitter breakdown voltage

V_(BR)CEO

I_C=-1mA,I_B=0

2SB647A -100

-5

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)EBO

I_CBO

I_E=-10µA,I_C=0

V_CB=-100V,I_E=0

-10

320

200

μA

2SB647

h_FE(1)

V_CE=-5V, I_C=-150mA

DC current gain

2SB647A

h_FE(2)

V_CE=-5V, I_C=-500mA

I_C=-500mA,I_B=-50mA

V_CE=-5V, I_C=-150mA

V_CB=-10V,I_E=0, f=1MHz

VCE=-5V,IC=-150mA

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

-1

-1.5

V_BE

Collector output capacitance

Transition frequency

C_ob

f_T

140

MHz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

CLASSIFICATION OF h_FE(1)

2SB647

TYPE

2SB647A

RANK

RANGE

60-120

100-200

160-320

A,Dec,2010

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