生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-PBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.41 | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | O-PBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB647C | CJ |
获取价格 |
Transistor |
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2SB647-C | RENESAS |
获取价格 |
SMALL SIGNAL TRANSISTOR |
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2SB647C(TO-92MOD) | CJ |
获取价格 |
Transistor |
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2SB647-C-AP | MCC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, RO |
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2SB647CTZ | RENESAS |
获取价格 |
1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN |
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2SB647CTZ | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92MOD, |
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2SB647CTZ-E | RENESAS |
获取价格 |
Silicon PNP Epitaxial |
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2SB647D | CJ |
获取价格 |
Transistor |
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2SB647-D | RENESAS |
获取价格 |
SMALL SIGNAL TRANSISTOR |
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2SB647D(TO-92L) | CJ |
获取价格 |
Transistor |
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